| PART |
Description |
Maker |
| TDA8939 TDA8939TH/N1 |
Zero dead time Class-D 7.5A power comparator
Zero dead time Class-D 7.5 A power comparator
|
PHILIPS
|
| HIP2121FRTAZ HIP2121FRTBZ HIP2120 HIP2120FRTAZ HIP |
100V, 2A Peak, High Frequency Half-Bridge Drivers with Adjustable Dead Time Control and PWM Input
|
Intersil Corporation
|
| CAT24FC65GLI-TE13 CAT24FC66ZD2I-TE13 CAT24FC65 CAT |
LM5105 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10
LM5104 High Voltage Half-Bridge Gate Driver with Adaptive Delay; Package: LLP; No of Pins: 10
Silver Mica Capacitor; Capacitance:1300pF; Capacitance Tolerance: /- 5%; Series:CD16; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.94mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY 连接器附
64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:5; Connector Shell Size:14S; Connecting Termination:Solder; Body Style:Straight; Circular Contact Gender:Socket; Gender:Female 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5107 100V / 1.4A Peak Half Bridge Gate Driver; Package: SOIC NARROW; No of Pins: 8 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: MINI SOIC; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
WASHER & NUT KIT for PDB181 MODEL 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
|
http://
CATALYST[Catalyst Semiconductor]
Vishay Intertechnology, Inc.
BCD Semiconductor Manufacturing, Ltd.
NXP Semiconductors N.V.
Motorola Mobility Holdings, Inc.
Cooper Bussmann, Inc.
Microchip Technology, Inc.
|
| 5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
| 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
|
Aeroflex Circuit Technology
|
| FRN-R-30 |
Dual-Element, Time-Delay Fuses Class RK5 - 250 Volt
|
Cooper Bussmann, Inc.
|
| CS4461-DZZR CDB44800 CS4461 CS4461-CZZ CS4461-CZZR |
Multi-Bit A/D for Class-D Real-Time PSR Feedback 1-CH DELTA-SIGMA ADC, PDSO24
|
CIRRUS LOGIC INC
Cirrus Logic, Inc.
CIRRUS[Cirrus Logic]
|
| FRN-R-15/100 |
Fusetron?FRN-R Class RK5 250Vac/125Vdc 1?0-60A, dual element, time-delay fuses
|
Cooper Bussmann, Inc.
|
| 14004-9 14004-10 14004-12 14004-4 14004-8 14004-2 |
Dead Front Terminal Blocks
|
Cooper Bussmann, Inc.
|
| 138-1115 138-1112 138-1139 138-1113 138-1138 1414 |
Dead Blow Nylon Hammers
|
THOR communications
|
| GPS-102 GPS-106 968EMG0008 968EMG0013 |
GPS Module with Dead Reckoning Sensor
|
Advantech Co., Ltd.
|
